VS-GT100TP60N IGBT Transistor

The VS-GT100TP60N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GT100TP60N transistor as follows.

VS-GT100TP60N Transistor Specification

Transistor Code		VS-GT100TP60N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		530
Rise Time		62

UXPython is not the creator or an official representative of the VS-GT100TP60N IGBT transistor. You can download the official VS-GT100TP60N IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

RJH1CM5DPQ-E0 IGBT Transistor GT50T101 IGBT Transistor GT30J122 IGBT Transistor IXGN200N60B IGBT Transistor STGB10NB40LZ IGBT Transistor ART10U120 IGBT Transistor IGC04R60DE IGBT Transistor MIO2400-17E10 IGBT Transistor IRGIB6B60KD IGBT Transistor BT15N120ANF IGBT Transistor IXGX320N60B3 IGBT Transistor VS-GT100TP120N IGBT Transistor IXYH40N90C3 IGBT Transistor MUBW10-06A7 IGBT Transistor SSIG15N135H IGBT Transistor IQS2B57N120K4 IGBT Transistor GT50M101 IGBT Transistor DL2G50SH6N IGBT Transistor MMG100S060B6R IGBT Transistor VS-40MT120UHTAPBF IGBT Transistor