VS-GB90DA60U IGBT Transistor

The VS-GB90DA60U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GB90DA60U transistor as follows.

VS-GB90DA60U Transistor Specification

Transistor Code		VS-GB90DA60U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT-227
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		53

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