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VS-GB55NA120UX IGBT Transistor

The VS-GB55NA120UX is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GB55NA120UX transistor as follows.

Circuit diagram symbol of the VS-GB55NA120UX transistor

VS-GB55NA120UX Transistor Specification

Transistor Code VS-GB55NA120UX
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT-227
Collector Power Dissipation (Maximum) Pc 242W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 57A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 35

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