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VS-GB400TH120N IGBT Transistor

The VS-GB400TH120N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GB400TH120N transistor as follows.

Circuit diagram symbol of the VS-GB400TH120N transistor

VS-GB400TH120N Transistor Specification

Transistor Code VS-GB400TH120N
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 2604W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 400A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 2420
Rise Time 71

UXPython is not the creator or an official representative of the VS-GB400TH120N IGBT transistor. You can download the official VS-GB400TH120N IGBT transistor datasheet to get more infromation about this transistor.

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