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VS-GB300TH120N IGBT Transistor

The VS-GB300TH120N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GB300TH120N transistor as follows.

Circuit diagram symbol of the VS-GB300TH120N transistor

VS-GB300TH120N Transistor Specification

Transistor Code VS-GB300TH120N
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1645W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 300A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1420
Rise Time 133

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