VS-GB150LH120N IGBT Transistor

The VS-GB150LH120N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GB150LH120N transistor as follows.

VS-GB150LH120N Transistor Specification

Transistor Code		VS-GB150LH120N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1389W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.87V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		710
Rise Time		60

UXPython is not the creator or an official representative of the VS-GB150LH120N IGBT transistor. You can download the official VS-GB150LH120N IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

NGTB50N60S1WG IGBT Transistor IRGP30B60KD-E IGBT Transistor MIXA61H1200ED IGBT Transistor NGTG30N60FLWG IGBT Transistor 2SH19 IGBT Transistor IRG4PC50FD IGBT Transistor IXGH32N90B2D1 IGBT Transistor MGP15N43CL IGBT Transistor IXGH50N60B4D1 IGBT Transistor IHW30N135R3 IGBT Transistor APTLGF140U120T IGBT Transistor IXBP5N160G IGBT Transistor IKD10N60RA IGBT Transistor MGS05N60D IGBT Transistor MMIX4G20N250 IGBT Transistor IGC05R60D IGBT Transistor STGW35HF60WDI IGBT Transistor TSG60N100CE IGBT Transistor IKW15T120 IGBT Transistor IXGR32N90B2D1 IGBT Transistor