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VS-GA250SA60S IGBT Transistor

The VS-GA250SA60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GA250SA60S transistor as follows.

Circuit diagram symbol of the VS-GA250SA60S transistor

VS-GA250SA60S Transistor Specification

Transistor Code VS-GA250SA60S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT-227
Collector Power Dissipation (Maximum) Pc 462W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.33V
Collector Current (Maximum) IC 250A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1040
Rise Time 42

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