VS-GA200SA60UP IGBT Transistor

The VS-GA200SA60UP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GA200SA60UP transistor as follows.

VS-GA200SA60UP Transistor Specification

Transistor Code		VS-GA200SA60UP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT-227
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.92V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1000
Rise Time		79

UXPython is not the creator or an official representative of the VS-GA200SA60UP IGBT transistor. You can download the official VS-GA200SA60UP IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMG400D120B6TN IGBT Transistor T0510VB45E IGBT Transistor GT50L101 IGBT Transistor APTGF15X120E2 IGBT Transistor STGFL6NC60DI IGBT Transistor STGF30H60DF IGBT Transistor IXSN35N120AU1 IGBT Transistor VS-GA200TH60S IGBT Transistor RJH60F5BDPQ-A0 IGBT Transistor NGTB40N120FL2WG IGBT Transistor MGP15N40CL IGBT Transistor IXEH25N120 IGBT Transistor TGAN15N120ND IGBT Transistor APT80GP60JDQ3 IGBT Transistor MUBW15-06A6K IGBT Transistor STGW30V60F IGBT Transistor DM2G100SH12A IGBT Transistor IXGT6N170 IGBT Transistor IXGP20N120 IGBT Transistor SKM22GD123D IGBT Transistor