VS-GA200HS60S1PBF IGBT Transistor

The VS-GA200HS60S1PBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GA200HS60S1PBF transistor as follows.

VS-GA200HS60S1PBF Transistor Specification

Transistor Code		VS-GA200HS60S1PBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	430W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.13V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2080

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