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VS-70MT060WSP IGBT Transistor

The VS-70MT060WSP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-70MT060WSP transistor as follows.

Circuit diagram symbol of the VS-70MT060WSP transistor

VS-70MT060WSP Transistor Specification

Transistor Code VS-70MT060WSP
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MTP
Collector Power Dissipation (Maximum) Pc 378W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.93V
Collector Current (Maximum) IC 96A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 530
Rise Time 35

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