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VS-40MT120UHTAPBF IGBT Transistor

The VS-40MT120UHTAPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-40MT120UHTAPBF transistor as follows.

Circuit diagram symbol of the VS-40MT120UHTAPBF transistor

VS-40MT120UHTAPBF Transistor Specification

Transistor Code VS-40MT120UHTAPBF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MTP
Collector Power Dissipation (Maximum) Pc 463W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.36V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 380

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