VS-100MT060WDF IGBT Transistor

The VS-100MT060WDF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-100MT060WDF transistor as follows.

VS-100MT060WDF Transistor Specification

Transistor Code		VS-100MT060WDF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	462W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.98V
Collector Current (Maximum)	IC	121A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		780
Rise Time		47

UXPython is not the creator or an official representative of the VS-100MT060WDF IGBT transistor. You can download the official VS-100MT060WDF IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

F3L15R12W2H3_B27 IGBT Transistor IXGV25N250S IGBT Transistor TA49049 IGBT Transistor IRGPS46160D IGBT Transistor HGTG11N120CND IGBT Transistor GA150TD120U IGBT Transistor APT45GP120B IGBT Transistor SMBH1G200US60 IGBT Transistor STGD3HF60HD IGBT Transistor IGW25T120 IGBT Transistor MGP11N60ED IGBT Transistor IKU10N60R IGBT Transistor IXA4I1200UC IGBT Transistor IRGP4740D IGBT Transistor HGTD10N40F1S IGBT Transistor APT50GF60HR IGBT Transistor MIXA40W1200TED IGBT Transistor IXGR50N60A2U1 IGBT Transistor SKM200GB063D IGBT Transistor STGFW40V60F IGBT Transistor