TSG40N120CE IGBT Transistor

The TSG40N120CE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TSG40N120CE transistor as follows.

TSG40N120CE Transistor Specification

Transistor Code		TSG40N120CE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC

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