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TSG25N120CN IGBT Transistor

The TSG25N120CN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TSG25N120CN transistor as follows.

Circuit diagram symbol of the TSG25N120CN transistor

TSG25N120CN Transistor Specification

Transistor Code TSG25N120CN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector Power Dissipation (Maximum) Pc 312W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 150 oC

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