TSG10N120CN IGBT Transistor

The TSG10N120CN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TSG10N120CN transistor as follows.

TSG10N120CN Transistor Specification

Transistor Code		TSG10N120CN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		65
Rise Time		13

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