TGL60N100ND1 IGBT Transistor

The TGL60N100ND1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGL60N100ND1 transistor as follows.

TGL60N100ND1 Transistor Specification

Transistor Code		TGL60N100ND1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	463W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		150
Rise Time		210

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