TGAN60N60FD IGBT Transistor

The TGAN60N60FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGAN60N60FD transistor as follows.

TGAN60N60FD Transistor Specification

Transistor Code		TGAN60N60FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PN
Collector Power Dissipation (Maximum)	Pc	347W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		170
Rise Time		125

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