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TGAN40N60FD IGBT Transistor

The TGAN40N60FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGAN40N60FD transistor as follows.

Circuit diagram symbol of the TGAN40N60FD transistor

TGAN40N60FD Transistor Specification

Transistor Code TGAN40N60FD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector Power Dissipation (Maximum) Pc 231W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 125
Rise Time 75

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