TGAN25N120ND IGBT Transistor

The TGAN25N120ND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGAN25N120ND transistor as follows.

TGAN25N120ND Transistor Specification

Transistor Code		TGAN25N120ND
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PN
Collector Power Dissipation (Maximum)	Pc	312W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		105
Rise Time		65

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