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TGAN25N120ND IGBT Transistor

The TGAN25N120ND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGAN25N120ND transistor as follows.

Circuit diagram symbol of the TGAN25N120ND transistor

TGAN25N120ND Transistor Specification

Transistor Code TGAN25N120ND
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector Power Dissipation (Maximum) Pc 312W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 105
Rise Time 65

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