TGAN15N120ND IGBT Transistor

The TGAN15N120ND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGAN15N120ND transistor as follows.

TGAN15N120ND Transistor Specification

Transistor Code		TGAN15N120ND
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PN
Collector Power Dissipation (Maximum)	Pc	212W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		60
Rise Time		22

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