T2400GB45E IGBT Transistor

The T2400GB45E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T2400GB45E transistor as follows.

T2400GB45E Transistor Specification

Transistor Code		T2400GB45E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	19000W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	2400A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3800

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