T2250AB25E IGBT Transistor

The T2250AB25E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T2250AB25E transistor as follows.

T2250AB25E Transistor Specification

Transistor Code		T2250AB25E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	11800W
Collector-Emitter Voltage (Maximum)	VCE	2500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.05V
Collector Current (Maximum)	IC	2250A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		2700

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