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T1600GB45G IGBT Transistor

The T1600GB45G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T1600GB45G transistor as follows.

Circuit diagram symbol of the T1600GB45G transistor

T1600GB45G Transistor Specification

Transistor Code T1600GB45G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 12800W
Collector-Emitter Voltage (Maximum) VCE 4500V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.75V
Collector Current (Maximum) IC 1600A
Operating Junction Temperature (Maximum) 125 oC
Rise Time 4400

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