T1200TB25A IGBT Transistor

The T1200TB25A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T1200TB25A transistor as follows.

T1200TB25A Transistor Specification

Transistor Code		T1200TB25A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOLATED 9 E326641 1
Collector Power Dissipation (Maximum)	Pc	5900W
Collector-Emitter Voltage (Maximum)	VCE	2500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	1200A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		2500

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