T1200EB45E IGBT Transistor

The T1200EB45E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T1200EB45E transistor as follows.

T1200EB45E Transistor Specification

Transistor Code		T1200EB45E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOLATED 9 E326641 1
Collector Power Dissipation (Maximum)	Pc	12500W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	1200A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3000

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