T0850VB25E IGBT Transistor

The T0850VB25E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0850VB25E transistor as follows.

T0850VB25E Transistor Specification

Transistor Code		T0850VB25E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	4400W
Collector-Emitter Voltage (Maximum)	VCE	2500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.05V
Collector Current (Maximum)	IC	850A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		2000

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