T0510VB45E IGBT Transistor

The T0510VB45E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0510VB45E transistor as follows.

T0510VB45E Transistor Specification

Transistor Code		T0510VB45E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	4100W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.75V
Collector Current (Maximum)	IC	510A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3300

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