T0340VB45G IGBT Transistor

The T0340VB45G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0340VB45G transistor as follows.

T0340VB45G Transistor Specification

Transistor Code		T0340VB45G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	2700W
Collector-Emitter Voltage (Maximum)	VCE	2800V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.75V
Collector Current (Maximum)	IC	340A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3200

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