STGY50NB60HD IGBT Transistor

The STGY50NB60HD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGY50NB60HD transistor as follows.

STGY50NB60HD Transistor Specification

Transistor Code		STGY50NB60HD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TMAX
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		4500pF
Rise Time		20

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