STGWT80V60DF IGBT Transistor

The STGWT80V60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT80V60DF transistor as follows.

STGWT80V60DF Transistor Specification

Transistor Code		STGWT80V60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	469W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		390
Rise Time		30

UXPython is not the creator or an official representative of the STGWT80V60DF IGBT transistor. You can download the official STGWT80V60DF IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGA48N60A3 IGBT Transistor IXXH40N65B4H1 IGBT Transistor FII50-12E IGBT Transistor FF1000R17IE4 IGBT Transistor HGTG20N60A4 IGBT Transistor DM2G75SH12A IGBT Transistor OM6520SC IGBT Transistor IRG6I330U IGBT Transistor 14N36GVL IGBT Transistor IRGP4050 IGBT Transistor MSAGX75L60B IGBT Transistor SM2G100US120 IGBT Transistor STGB10N60L IGBT Transistor SGW23N60UF IGBT Transistor IXYH75N65C3 IGBT Transistor STGP20NC60V IGBT Transistor IXBA12N300HV IGBT Transistor 1MB20-060 IGBT Transistor VKI75-06P1 IGBT Transistor IKB03N120H2 IGBT Transistor