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STGWT60H65FB IGBT Transistor

The STGWT60H65FB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT60H65FB transistor as follows.

Circuit diagram symbol of the STGWT60H65FB transistor

STGWT60H65FB Transistor Specification

Transistor Code STGWT60H65FB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 375W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.75V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 262
Rise Time 38

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