STGWT50HF65SD IGBT Transistor

The STGWT50HF65SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT50HF65SD transistor as follows.

STGWT50HF65SD Transistor Specification

Transistor Code		STGWT50HF65SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	284W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.05V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		400
Rise Time		20

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