STGWT40H60DLFB IGBT Transistor

The STGWT40H60DLFB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT40H60DLFB transistor as follows.

STGWT40H60DLFB Transistor Specification

Transistor Code		STGWT40H60DLFB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	283W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		198

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