STGWT30H60DFB IGBT Transistor

The STGWT30H60DFB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT30H60DFB transistor as follows.

STGWT30H60DFB Transistor Specification

Transistor Code		STGWT30H60DFB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	260W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		101
Rise Time		14.6

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