STGWT28IH125DF IGBT Transistor

The STGWT28IH125DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT28IH125DF transistor as follows.

STGWT28IH125DF Transistor Specification

Transistor Code		STGWT28IH125DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	375W
Collector-Emitter Voltage (Maximum)	VCE	1250V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.25V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		139

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