STGWA30N120KD IGBT Transistor

The STGWA30N120KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWA30N120KD transistor as follows.

STGWA30N120KD Transistor Specification

Transistor Code		STGWA30N120KD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	220W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		170
Rise Time		22

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