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STGWA30N120KD IGBT Transistor

The STGWA30N120KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWA30N120KD transistor as follows.

Circuit diagram symbol of the STGWA30N120KD transistor

STGWA30N120KD Transistor Specification

Transistor Code STGWA30N120KD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 220W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 25V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 125 oC
Collector Capacitance 170
Rise Time 22

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