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STGWA15M120DF3 IGBT Transistor

The STGWA15M120DF3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWA15M120DF3 transistor as follows.

Circuit diagram symbol of the STGWA15M120DF3 transistor

STGWA15M120DF3 Transistor Specification

Transistor Code STGWA15M120DF3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 259W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 118
Rise Time 12

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