STGW80V60DF IGBT Transistor

The STGW80V60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW80V60DF transistor as follows.

STGW80V60DF Transistor Specification

Transistor Code		STGW80V60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	469W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		390
Rise Time		30

UXPython is not the creator or an official representative of the STGW80V60DF IGBT transistor. You can download the official STGW80V60DF IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMG50SR120UZA IGBT Transistor RCM10N40 IGBT Transistor MMG300D120B6TN IGBT Transistor IXBH2N250 IGBT Transistor MWI50-12E6K IGBT Transistor AP40G120W IGBT Transistor MMG150Q060B6HN IGBT Transistor IXGA20N120 IGBT Transistor MMG75S060B6R IGBT Transistor TA49182 IGBT Transistor IXGK80N60A IGBT Transistor SKM145GAR123D IGBT Transistor IXYT30N65C3H1HV IGBT Transistor IRG8P25N120KD IGBT Transistor SKM100GB12V IGBT Transistor IRGB4B60K IGBT Transistor FB20R06W1E3 IGBT Transistor IHW30N110R3 IGBT Transistor IXGA42N30C3 IGBT Transistor TSG60N100CE IGBT Transistor