STGW60H65F IGBT Transistor

The STGW60H65F is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW60H65F transistor as follows.

STGW60H65F Transistor Specification

Transistor Code		STGW60H65F
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	360W
Collector-Emitter Voltage (Maximum)	VCE	650V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	60A

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