STGW60H65DRF IGBT Transistor

The STGW60H65DRF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW60H65DRF transistor as follows.

STGW60H65DRF Transistor Specification

Transistor Code		STGW60H65DRF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	360W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		275
Rise Time		33

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