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STGW50HF60SD IGBT Transistor

The STGW50HF60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW50HF60SD transistor as follows.

Circuit diagram symbol of the STGW50HF60SD transistor

STGW50HF60SD Transistor Specification

Transistor Code STGW50HF60SD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 284W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.05V
Collector Current (Maximum) IC 30A

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