STGW45HF60WDI IGBT Transistor

The STGW45HF60WDI is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW45HF60WDI transistor as follows.

STGW45HF60WDI Transistor Specification

Transistor Code		STGW45HF60WDI
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247_TO247_LONG_LEA
Collector Power Dissipation (Maximum)	Pc	310W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	30A

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