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STGW40M120DF3 IGBT Transistor

The STGW40M120DF3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW40M120DF3 transistor as follows.

Circuit diagram symbol of the STGW40M120DF3 transistor

STGW40M120DF3 Transistor Specification

Transistor Code STGW40M120DF3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 468W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 275
Rise Time 15

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