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STGW39NC60VD IGBT Transistor

The STGW39NC60VD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW39NC60VD transistor as follows.

Circuit diagram symbol of the STGW39NC60VD transistor

STGW39NC60VD Transistor Specification

Transistor Code STGW39NC60VD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 30A

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