STGW35NB60SD IGBT Transistor

The STGW35NB60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW35NB60SD transistor as follows.

STGW35NB60SD Transistor Specification

Transistor Code		STGW35NB60SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.2V
Collector Current (Maximum)	IC	20A

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