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STGW35HF60WD IGBT Transistor

The STGW35HF60WD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW35HF60WD transistor as follows.

Circuit diagram symbol of the STGW35HF60WD transistor

STGW35HF60WD Transistor Specification

Transistor Code STGW35HF60WD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 20A

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