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STGW30V60F IGBT Transistor

The STGW30V60F is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW30V60F transistor as follows.

Circuit diagram symbol of the STGW30V60F transistor

STGW30V60F Transistor Specification

Transistor Code STGW30V60F
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.15V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 120
Rise Time 16

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