STGW30H60DF IGBT Transistor

The STGW30H60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW30H60DF transistor as follows.

STGW30H60DF Transistor Specification

Transistor Code		STGW30H60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	260W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		130
Rise Time		15

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