STGW25H120DF2 IGBT Transistor

The STGW25H120DF2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW25H120DF2 transistor as follows.

STGW25H120DF2 Transistor Specification

Transistor Code		STGW25H120DF2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	375W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		146
Rise Time		12

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