STGW12NB60H IGBT Transistor

The STGW12NB60H is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW12NB60H transistor as follows.

STGW12NB60H Transistor Specification

Transistor Code		STGW12NB60H
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	120W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		650pF
Rise Time		5

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